Global GaN Power Devices Market 2018 Report Includes Industrial Potential Growth With Market Share Analysis Till 2023

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GaN material has a critical field that is 10 times higher than silicon. With the same voltage ratings, a much lower on state resistance can be achieved.

Scope of the Report:
This report focuses on the GaN Power Devices in global market, especially in North America, Europe and Asia-Pacific, South America, Middle East and Africa. This report categorizes the market based on manufacturers, regions, type and application.

The global GaN power device market for RF power device held the largest share in 2016. In 2016, more than 90% of the total GaN power device market for RF power devices was dominated by the telecommunications; military, defense, and aerospace; and consumer and enterprise verticals. RF power devices are used in the military applications, very small aperture terminal (VSAT), phased-array radar applications, defense applications, RF cellular infrastructure, jammers, and satellite communications. Initially developed for improvised explosive device (IED) jammers in Iraq, GaN RF power has emerged as the technology of choice for all new microwave and millimeter-wave electronics including radar, satellite, communications, and electronic warfare.

The market for GaN-based power drives is expected to grow significantly during the forecast period. This is attributed to its characteristics such as high breakdown voltage and low conduction resistance characteristics that enable high-speed switching and miniaturization. The growing EV charging and electric vehicle production markets, as well as increasing renewable energy generation are the main reasons for the high growth rate of GaN-based power devices. 

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Moreover, there is a huge demand for motor drives due to the high efficiency and performance characteristics offered by GaN devices in high voltage range (above 400 V) applications. GaN power devices are mainly used in UPS and motor control, wireless charging, high-efficiency power supply applications, servo motor drive, and hybrid and EV battery control and health management systems. 

The worldwide market for GaN Power Devices is expected to grow at a CAGR of roughly xx% over the next five years, will reach xx million US$ in 2023, from xx million US$ in 2017, according to a new GIR (Global Info Research) study.

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Market Segment by Manufacturers, this report covers
Fujitsu
Toshiba
Koninklijke Philips
Texas Instruments
EPIGAN
NTT Advanced Technology
RF Micro Devices
Cree Incorporated
Aixtron
International Quantum Epitaxy (IQE)
Mitsubishi Chemical
AZZURO Semiconductors

Market Segment by Regions, regional analysis covers
North America (United States, Canada and Mexico)
Europe (Germany, France, UK, Russia and Italy)
Asia-Pacific (China, Japan, Korea, India and Southeast Asia)
South America (Brazil, Argentina, Colombia etc.)
Middle East and Africa (Saudi Arabia, UAE, Egypt, Nigeria and South Africa)

Market Segment by Type, covers
600V
Other

Market Segment by Applications, can be divided into
Server and Other IT Equipments
High-efficiency and Stable Power Supplies
Rapidly Expanding HEV/EV Devices

There are 15 Chapters to deeply display the global GaN Power Devices market.
Chapter 1, to describe GaN Power Devices Introduction, product scope, market overview, market opportunities, market risk, market driving force;
Chapter 2, to analyze the top manufacturers of GaN Power Devices, with sales, revenue, and price of GaN Power Devices, in 2016 and 2017;
Chapter 3, to display the competitive situation among the top manufacturers, with sales, revenue and market share in 2016 and 2017;
Chapter 4, to show the global market by regions, with sales, revenue and market share of GaN Power Devices, for each region, from 2013 to 2018;
Chapter 5, 6, 7, 8 and 9, to analyze the market by countries, by type, by application and by manufacturers, with sales, revenue and market share by key countries in these regions;
Chapter 10 and 11, to show the market by type and application, with sales market share and growth rate by type, application, from 2013 to 2018;
Chapter 12, GaN Power Devices market forecast, by regions, type and application, with sales and revenue, from 2018 to 2023;
Chapter 13, 14 and 15, to describe GaN Power Devices sales channel, distributors, traders, dealers, Research Findings and Conclusion, appendix and data source

GaN Power Devices Market - Global Industry Analysis, Size, Share, Growth, Trends and Forecast, 2017 - 2025

Researchmoz added Most up-to-date research on "GaN Power Devices Market - Global Industry Analysis, Size, Share, Growth, Trends and Forecast, 2017 - 2025" to its huge collection of research reports.

This report on the global GaN power devices market provides analysis for the period 2015–2025, wherein 2016 is the base year and the period from 2017 to 2025 is the forecast period. Data for 2015 has been included as historical information. The report covers market dynamics including drivers, restraints opportunities, and trends expected to influence the global GaN power devices market growth during the said period. Components that are playing a major role in driving the global GaN power devices market have also been covered in the report. The study provides a comprehensive analysis on market growth throughout the above mentioned forecast period in terms of revenue estimates (in US$ Mn), across different geographies. GaN semiconductor devices provide a competitive advantage in terms of thermal performance, efficiency, weight and size. GaN is anticipated to be the next generation power semiconductor and thus different countries are indulged in developing widespread applications of GaN semiconductors.

Global GaN Power Devices Market: Segmentation
The GaN power devices market has been segmented on the basis of component, industry vertical and region. On the basis of component, the market is segmented into GaN power discrete devices, GaN power IC's and GaN power modules. The GaN power discrete devices is further sub-segmented into GaN power RF devices and GaN power non-RF devices. Also, the GaN power ICs is further classified into MMIC and hybrid. In terms of industry vertical, the market is segmented into consumer electronics, IT & telecommunications, automotive, aerospace & defense, and others.

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Global GaN Power Devices Market: Geographical Dynamics
Geographically, the report classifies the global GaN power devices market into North America, Europe, Asia Pacific, Middle East & Africa (MEA), and South America; the regions are analyzed in terms of revenue generation. Furthermore, the study also includes quantitative analysis of the competitive scenario for region wise prominent countries. These countries include the U.S, Canada, Germany, France, the U.K., Spain, China, India, Japan, GCC countries, South Africa, and Brazil. The market size and forecast for each region has been provided for the period from 2015 to 2025 along with the CAGR (%) for the forecast period from 2017 to 2025.

Global GaN Power Devices Market: Research Methodology
The report also includes key market indicators in the GaN power devices market. Porter’s five forces analysis is also included in the report. Value chain analysis which identifies the key participants in the GaN power devices is also covered in the report. The GaN power devices market report covers segment wise comparison matrix and market positioning analysis for all regions covered in the scope of our research. The report also includes market attractiveness analysis for all the segments and for all the regions in the scope of study which identifies and compares segments’ market attractiveness on the basis of CAGR and market share index.

Global GaN Power Devices Market: Competitive Dynamics
The report includes competition landscape which covers competition matrix, market positioning analysis of major players in the global GaN power devices market based on their 2016 revenues, profiling of major players (GaN power devices provider). Competition matrix benchmarks leading players on the basis of their capabilities and potential to grow. Factors including market position, offerings and R&D focus are included to explain the company’s capabilities. Factors including top line growth, market share, segment growth, infrastructure facilities and future outlook are attributed to company’s potential to grow. This section also identifies and includes various recent developments carried out by the leading players.

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Company profiling includes company overview, major business strategies adopted, SWOT analysis and market revenues for past years. The key players in GaN Power Devices market include Efficient Power Conversion Corporation, NXP Semiconductors N.V., GaN Systems Inc, Texas Instruments, Infineon Technologies AG, Fujitsu Limited, Transphorm Inc., Cree Incorporated (Wolfspeed), OSRAM Opto Semiconductors GmbH, and Qorvo, Inc, among others.

The global GaN power devices market is segmented as below:

Market Segmentation

GaN Power Devices Market, by Component

• GaN Power Discrete Devices
• GaN Power RF Devices
• GaN Power Non-RF Devices
• GaN Power IC’s
• MMIC
• Hybrid
• GaN Power Modules

GaN Power Devices Market, Industry vertical

• Consumer Electronics
• IT & Telecommunications
• Automotive
• Aerospace & Defense
• Others

GaN Power Devices Market, by Geography

• North America
• The U.S.
• Canada
• Rest of North America
• Europe
• The U.K.
• Germany
• France
• Rest of Europe
• Asia Pacific (APAC)
• China
• Japan
• South Korea
• Rest of APAC
• Middle East and Africa (MEA)
• GCC
• South Africa
• Rest of MEA
• South America
• Brazil
• Argentina
• Rest of South America

Global GaN Power Devices Market is expected to worth US$1.4 bn by 225: Rising prominence of electric vehicles in the global automotive sector

Researchmoz added Most up-to-date research on "Global GaN Power Devices Market is expected to worth US$1.4 bn by 225: Rising prominence of electric vehicles in the global automotive sector" to its huge collection of research reports.

This report on the global GaN power devices market provides analysis for the period 2015–2025, wherein 2016 is the base year and the period from 2017 to 2025 is the forecast period. Data for 2015 has been included as historical information. The report covers market dynamics including drivers, restraints opportunities, and trends expected to influence the global GaN power devices market growth during the said period. Components that are playing a major role in driving the global GaN power devices market have also been covered in the report. The study provides a comprehensive analysis on market growth throughout the above mentioned forecast period in terms of revenue estimates (in US$ Mn), across different geographies. GaN semiconductor devices provide a competitive advantage in terms of thermal performance, efficiency, weight and size. GaN is anticipated to be the next generation power semiconductor and thus different countries are indulged in developing widespread applications of GaN semiconductors.

Global GaN Power Devices Market: Segmentation
The GaN power devices market has been segmented on the basis of component, industry vertical and region. On the basis of component, the market is segmented into GaN power discrete devices, GaN power IC's and GaN power modules. The GaN power discrete devices is further sub-segmented into GaN power RF devices and GaN power non-RF devices. Also, the GaN power ICs is further classified into MMIC and hybrid. In terms of industry vertical, the market is segmented into consumer electronics, IT & telecommunications, automotive, aerospace & defense, and others.

Global GaN Power Devices Market: Geographical Dynamics
Geographically, the report classifies the global GaN power devices market into North America, Europe, Asia Pacific, Middle East & Africa (MEA), and South America; the regions are analyzed in terms of revenue generation. Furthermore, the study also includes quantitative analysis of the competitive scenario for region wise prominent countries. These countries include the U.S, Canada, Germany, France, the U.K., Spain, China, India, Japan, GCC countries, South Africa, and Brazil. The market size and forecast for each region has been provided for the period from 2015 to 2025 along with the CAGR (%) for the forecast period from 2017 to 2025.

Global GaN Power Devices Market: Research Methodology
The report also includes key market indicators in the GaN power devices market. Porter’s five forces analysis is also included in the report. Value chain analysis which identifies the key participants in the GaN power devices is also covered in the report. The GaN power devices market report covers segment wise comparison matrix and market positioning analysis for all regions covered in the scope of our research. The report also includes market attractiveness analysis for all the segments and for all the regions in the scope of study which identifies and compares segments’ market attractiveness on the basis of CAGR and market share index.

Global GaN Power Devices Market: Competitive Dynamics
The report includes competition landscape which covers competition matrix, market positioning analysis of major players in the global GaN power devices market based on their 2016 revenues, profiling of major players (GaN power devices provider). Competition matrix benchmarks leading players on the basis of their capabilities and potential to grow. Factors including market position, offerings and R&D focus are included to explain the company’s capabilities. Factors including top line growth, market share, segment growth, infrastructure facilities and future outlook are attributed to company’s potential to grow. This section also identifies and includes various recent developments carried out by the leading players.

To Get Sample Copy of Report visit @ http://www.researchmoz.us/enquiry.php?type=S&repid=1307307

Company profiling includes company overview, major business strategies adopted, SWOT analysis and market revenues for past years. The key players in GaN Power Devices market include Efficient Power Conversion Corporation, NXP Semiconductors N.V., GaN Systems Inc, Texas Instruments, Infineon Technologies AG, Fujitsu Limited, Transphorm Inc., Cree Incorporated (Wolfspeed), OSRAM Opto Semiconductors GmbH, and Qorvo, Inc, among others.

The global GaN power devices market is segmented as below:

Market Segmentation

GaN Power Devices Market, by Component

• GaN Power Discrete Devices
• GaN Power RF Devices
• GaN Power Non-RF Devices
• GaN Power IC’s
• MMIC
• Hybrid
• GaN Power Modules

GaN Power Devices Market, Industry vertical

• Consumer Electronics
• IT & Telecommunications
• Automotive
• Aerospace & Defense
• Others

GaN Power Devices Market, by Geography

• North America
• The U.S.
• Canada
• Rest of North America
• Europe
• The U.K.
• Germany
• France
• Rest of Europe
• Asia Pacific (APAC)
• China
• Japan

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